InGaAs Metal-Oxide-Semiconductor FETs with Self-Aligned Ni-Alloy Source/Drain

Title:	InGaAs Metal-Oxide-Semiconductor FETs with Self-Aligned Ni-Alloy Source/Drain
Authors:	Wang, Shin-Yuan Chien, Chao-Hsin Lin, Jin-Ju Chang, Chun-Yen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	2015
Abstract:	N-type InGaAs MOSFETs with self-aligned nickel-InGaAs alloy and ex-situ ALD Al2O3 as gate dielectrics was successfully fabricated. The InGaAs MOSFETs exhibit an S/D resistance (RSD) that is lower than that in P-N junction devices due to the low Schottky barrier height and the peak mobility was about 1138 cm(2)/V-s and the interface state density (D-it) was about 10(12) cm(-2)eV(-1) at ET = EV + 0.6 eV by using full-conductance method
URI:	http://hdl.handle.net/11536/136106
ISBN:	978-1-4799-9928-6
ISSN:	1946-1550
Journal:	PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)
Begin Page:	390
End Page:	393
Appears in Collections:	Conferences Paper