| Title: | 利用碲為源層及增強阻障特性於氮化矽金屬導電橋接電阻式記憶體之可靠度優化研究 Optimization of Reliability in SiN-based Conductive Bridge Random Access Memory by Using Tellurium as Source Layer and Enhancing Barrier Property |
| Authors: | 戴光駿 曾俊元 Dai, Guang-Jyun Tseng, Tseung-Yuen 電子工程學系 電子研究所 |
| Keywords: | 碲;氮化矽;金屬導電橋接電組式記憶體;阻障層;Tellurium;Silicon nitride;CBRAM;Barrier |
| Issue Date: | 2016 |
| URI: | http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070350159 http://hdl.handle.net/11536/138881 |
| Appears in Collections: | Thesis |
- Impact of barrier layer on HfO2-based conductive bridge random access memory / Lin, Chun-An;Huang, Chu-Jie;Tseng, Tseung-Yuen
- Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure / Tsai, Tsung-Ling;Jiang, Fa-Shen;Ho, Chia-Hua;Lin, Chen-Hsi;Tseng, Tseung-Yuen
- High Performance Resistive Switching Characteristics of SiN Films with a Cu/Ta/SiN/Cu/SiN/TiN Multilayer Structure / Kumar, D.;Tseng, T. Y.
- Annealing effects on resistive switching of IGZO-based CBRAM devices / Gan, Kai-Jhih;Liu, Po-Tsun;Ruan, Dun-Bao;Chiu, Yu-Chuan;Sze, Simon M.
- Resistive Switching Characteristics and Reliability of SiNx-Based Conductive Bridge Random Access Memory / Lin, Chun-An;Dai, Guang-Jyun;Tseng, Tseung-Yuen
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