Title: Progress and prospects of GaN-based VCSEL from near UV to green emission
Authors: Yu, Hsin-chieh
Zheng, Zhi-wei
Mei, Yang
Xu, Rong-bin
Liu, Jian-ping
Yang, Hui
Zhang, Bao-ping
Lu, Tien-chang
Kuo, Hao-chung
照明與能源光電研究所
光電工程學系
Institute of Lighting and Energy Photonics
Department of Photonics
Issue Date: 1-Jan-2018
Abstract: GaN is a great material for making optoelectronic devices in the blue, blue-violet and green bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including small footprint, circular symmetry of output beam, two-dimensional scalability and/or addressability, surface mount packaging, good price-performance ratio, and simple optics/alignment for output coupling. In this paper, we would like to (1) Review the design and fabrication of GaN-based VCSELs including some technology challenges, (2) Discuss the design and metalorganic chemical vapor deposition (MOCVD) growth of electrically pumped blue VCSELs and (3) Demonstrate world first green VCSEL using quantum dots (QDs) active region to overcome the 'green gap'.
URI: http://dx.doi.org/10.1016/j.pquantelec.2018.02.001
http://hdl.handle.net/11536/145026
ISSN: 0079-6727
DOI: 10.1016/j.pquantelec.2018.02.001
Journal: PROGRESS IN QUANTUM ELECTRONICS
Volume: 57
Begin Page: 1
End Page: 19
Appears in Collections:Articles