Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturing

Title:	Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturing
Authors:	Tominov, R. V. Zamburg, E. G. Khakhulin, D. A. Klimin, V. S. Smirnov, V. A. Chu, Y. H. Ageev, O. A. 材料科學與工程學系電子物理學系 Department of Materials Science and Engineering Department of Electrophysics
Issue Date:	1-Jan-2017
Abstract:	The resistive switching effect in ZnxTiyHfzOi nanocomposite film, grown by pulsed laser deposition technique, was investigated. It was shown that ZnxTiyHfzOi film surface had a granular structure with 0.8 +/- 0.4 mu m(2) grain size and 7.3 +/- 5.1 nm grain height. Resistive switching from high resistance state (HRS) to low resistance state (LRS) was occurred at 0.9 +/- 0.4 V, and from LRS to HRS at 1.5 +/- 0.2 V. HRS/LRS ratio was 2.6. The results can be used for nanocomposite-metaloxide-film RRAM fabrication.
URI:	http://dx.doi.org/10.1088/1742-6596/917/3/032023 http://hdl.handle.net/11536/146889
ISSN:	1742-6588
DOI:	10.1088/1742-6596/917/3/032023
Journal:	4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017)
Volume:	917
Begin Page:	0
End Page:	0
Appears in Collections:	Conferences Paper

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APA	Tominov, R. V., Zamburg, E. G., Khakhulin, D. A., Klimin, V. S., Smirnov, V. A., Chu, Y. H., & Ageev, O. A. (2017). Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturing. WOS:000423729100026.
Bibtex	@article{Tominov2017Investigation, title={Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturing}, author={Tominov, R. V. and Zamburg, E. G. and Khakhulin, D. A. and Klimin, V. S. and Smirnov, V. A. and Chu, Y. H. and Ageev, O. A.}, journal={WOS:000423729100026}, year={2017}, url={https://ir.lib.nycu.edu.tw/handle/11536/146889}, }