Title: Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold
Authors: Tsai, Yi-Chia
Magyari-Kope, Blanka
Li, Yiming
Samukawa, Seiji
Nishi, Yoshio
Sze, Simon M.
交大名義發表
電子工程學系及電子研究所
電機工程學系
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
Department of Electrical and Computer Engineering
Keywords: Black phosphorus;contact;scandium;gold;multilayer;first-principles calculation;DFT;electron injection
Issue Date: 1-Jan-2019
Abstract: High contact resistance keeps black phosphorus (BP) from fully wielding its excellent material property. Using first-principles calculations, we analyze the interfacial binding behavior and the impact of binding on the other layers of a trilayer BP. We found that the interfacial charge density and charge transfer of Scandium (Sc)-contacted trilayer BP are 2.67 and 3.29 times greater than Au-contacted trilayer BP, respectively. Moreover, the interfacial tunneling barrier height and width of Sc-contacted trilayer BP are 0 eV and 1.851 angstrom, which are significantly smaller than that of 5.1 eV and 2.447 angstrom observed in Au-contacted trilayer BP. All these facts suggest a strong bonding and efficient carrier transmission between Sc contact and trilayer BP substrate. Therefore, we conclude that the Sc electrode can lead to a superior performance that is consistent with the experiment.
URI: http://dx.doi.org/10.1109/JEDS.2019.2897167
http://hdl.handle.net/11536/148992
ISSN: 2168-6734
DOI: 10.1109/JEDS.2019.2897167
Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 7
Begin Page: 322
End Page: 328
Appears in Collections:Articles