EFFECTS OF SUBSTRATE-TEMPERATURE AND OXYGEN PARTIAL-PRESSURE ON THE PROPERTIES OF SPUTTERED ZIRCONIUM TITANATE THIN-FILMS

doi:10.1143/JJAP.34.4854

Title:	EFFECTS OF SUBSTRATE-TEMPERATURE AND OXYGEN PARTIAL-PRESSURE ON THE PROPERTIES OF SPUTTERED ZIRCONIUM TITANATE THIN-FILMS
Authors:	CHANG, DA LIN, P TSENG, TY 材料科學與工程學系電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics
Keywords:	ZIRCONIUM TITANATE;RF MAGNETRON SPUTTERING;REFRACTIVE INDEX;EXTINCTION COEFFICIENT;CRYSTALLINITY PHASE
Issue Date:	1-Sep-1995
Abstract:	We report the effects of substrate temperature and O-2/Ar ratios on the properties of ZrTiO4 thin films prepared by RF magnetron sputtering. The films were deposited at a constant gas pressure (0.133 Pa) with various substrate temperatures (25-450 degrees C) and different O-2/Ar ratios from 0/100 to 20/80. The deposition rate decreases with increasing oxygen partial pressure and substrate temperature. Moreover, the higher O-2 content increases the surface roughness of deposited films, which reduces the transmittance of the films. The effects of substrate temperature and oxygen partial pressure on the stoichiometric composition, optical constant, crystallinity phase, surface morphology, and adhesion have also been systematically investigated.
URI:	http://dx.doi.org/10.1143/JJAP.34.4854 http://hdl.handle.net/11536/149140
ISSN:	0021-4922
DOI:	10.1143/JJAP.34.4854
Journal:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume:	34
Begin Page:	4854
End Page:	4861
Appears in Collections:	Articles