Title: A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold current
Authors: Yen, ST
Lee, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Sep-1996
Abstract: A novel cladding structure is proposed and analyzed for semiconductor quantum-well lasers ttl achieve a small vertical-beam divergence and a low threshold current density simultaneously, This cladding structure is designed to guide a wide optical mode but with a high peak intensity in quantum wells. The wide expansion of the optical mode results in a small beam divergence. In addition, the high optical intensity in quantum wells causes a low threshold current density, This novel cladding structure is optimized. The result shows that this type of cladding structures can achieve a beam divergence as small as 14.6 degrees while the threshold current density remains small.
URI: http://dx.doi.org/10.1109/3.535363
http://hdl.handle.net/11536/149297
ISSN: 0018-9197
DOI: 10.1109/3.535363
Journal: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 32
Begin Page: 1588
End Page: 1595
Appears in Collections:Articles