Title: Application of Supercritical CO2 Fluid for Dielectric Improvement of SiOx Film
Authors: Tsai, Chih-Tsung
Chang, Ting-Chang
Liu, Po-Tsun
Cheng, Yi-Li
Kin, Kon-Tsu
Huang, Fon-Shan
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
Keywords: bonds (chemical);carbon compounds;dielectric hysteresis;dielectric thin films;electric fields;leakage currents;silicon compounds
Issue Date: 1-Jan-2009
Abstract: In this paper the supercritical carbon dioxide (SCCO2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (SiOx) film at 150 degrees C. After the treatment of SCCO2 fluid mixed with ethyl alcohol and pure H2O, the oxygen content of SiOx film increases and the traps within SiOx are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10(-2) to 3x10(-8) A/cm(2) at an electric field of 3 MV/cm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.
URI: http://dx.doi.org/10.1149/1.3028217
http://hdl.handle.net/11536/149668
ISSN: 1099-0062
DOI: 10.1149/1.3028217
Journal: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 12
Appears in Collections:Articles