| Title: | SUBPICOSECOND CARRIER LIFETIMES IN ARSENIC-ION-IMPLANTED GAAS |
| Authors: | GANIKHANOV, F LIN, GR CHEN, WC CHANG, CS PAN, CL 光電工程學系 Department of Photonics |
| Issue Date: | 4-Dec-1995 |
| Abstract: | We have investigated photoexcited carrier lifetimes in arsenic-ion-implanted semi-insulating GaAs by time-resolved reflectivity measurements. Subpicosecond carrier lifetimes (220 to 550 fs) which do not exhibit apparent dosage dependence for samples bombarded with 200 keV arsenic ions at increasing dosages in the range of 10(12) and 10(16) ions/cm(2) are reported. The shortest carrier lifetime was observed for the sample irradiated at 10(13) ions/cm(-2). These are the shortest lifetimes ever observed for ion-damaged GaAs and comparable to those of low-temperature molecular beam epitaxially grown GaAs, which is also nonstoichiometric with excess-arsenic-related, deep-level defects. (C) 1995 American Institute of Physics. |
| URI: | http://dx.doi.org/10.1063/1.115248 http://hdl.handle.net/11536/1604 |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.115248 |
| Journal: | APPLIED PHYSICS LETTERS |
| Volume: | 67 |
| Issue: | 23 |
| Begin Page: | 3465 |
| End Page: | 3467 |
| Appears in Collections: | Articles |
- Arsenic-implanted GaAs: An alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications / Pan, CL;Lin, GR
- Effect of rapid thermal annealing on carrier lifetimes of arsenic-ion-implanted GaAs / Lin, GR;Chen, WC;Ganikhanov, F;Chang, CS;Pan, CL
- Picosecond responses of low-dosage arsenic-ion-implanted GaAs photoconductors / Lin, GR;Pan, CL
- Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs / Lin, GR;Chen, WC;Chang, CS;Chao, SC;Wu, KH
- THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs / Liu, TA;Tani, M;Lin, GR;Pan, CL
Loading...