Temperature dependence of thin-film transistors electrical characteristics with multiple nano-wire channels

Title:	Temperature dependence of thin-film transistors electrical characteristics with multiple nano-wire channels
Authors:	Yang, Che-Yu Wu, Yung-Chun Chang, Ting-Chang Liu, Po-Tsun Chen, Chi-Shen Tu, Chun-Hao Chang, Chun-Yen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	2005
Abstract:	We have investigated the temperature dependent electrical characteristics of lightly-doped drain (LDD) polysilicon thin-film transistors (poly-Si TFTs) with a series of multi-channel with different widths from 25 degrees C to 175 degrees C. The ten 67 nm-wide spilt channels TFT has best transfer characteristics, because of its robust trigate control and grain boundary defects is the lowest, due to its split nan-wires structure with effective NH3 plasma passivation.
URI:	http://hdl.handle.net/11536/17905
ISBN:	978-957-28522-2-4
Journal:	IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005
Begin Page:	500
End Page:	502
Appears in Collections:	Conferences Paper