Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs

Title:	Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs
Authors:	Chan, CT Kuo, CH Tang, CJ Chen, MC Wang, TH Lu, SH Hu, HC Chen, TF Yang, CK Lee, MT Wu, DY Chen, JK Chien, SC Sun, SW 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	SOI pMOS;breakdown progression;body potential;carrier temperature
Issue Date:	2004
Abstract:	Accelerated oxide breakdown progression in ultra-thin oxide (1.4nm) SOI pMOSFETs is observed, as compared to bulk devices. The accelerated progression is explained by the increase of hole stress current as a result of breakdown induced channel carrier heating in a floating-body configuration. Numerical simulation of hole tunneling current and hot carrier luminescence measurement are carried out to justify the proposed theory.
URI:	http://hdl.handle.net/11536/18273
ISBN:	0-7803-8454-7
Journal:	IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS
Begin Page:	49
End Page:	52
Appears in Collections:	Conferences Paper