Electrical and reliability characteristics of 1nm ultrathin oxynitride gate dielectric prepared by RTP

Title:	Electrical and reliability characteristics of 1nm ultrathin oxynitride gate dielectric prepared by RTP
Authors:	Yang, WC Chen, CF Chang, KM 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	2003
Abstract:	Ultra low leakage and highly reliable 1 nm gate oxynitride films were successfully developed. Ultrathin oxynitride films were prepared by RTP in N-2/O-2 = 5/1 (slm) optimum mixed gas ambient These films show excellent interface properties, significantly low gate leakage current, and superior enhanced reliability. Moreover, interface trap generation under higher field stressing was also investigated.
URI:	http://hdl.handle.net/11536/18671
ISBN:	0-7803-7749-4
Journal:	2003 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS
Begin Page:	349
End Page:	352
Appears in Collections:	Conferences Paper