Process-related reliability issues toward sub-100 nm device regime

Title:	Process-related reliability issues toward sub-100 nm device regime
Authors:	Chang, CY Chao, TS Lin, HC Chien, CH 交大名義發表 National Chiao Tung University
Issue Date:	2002
Abstract:	Crucial process-related reliability issues, such as boron penetration, plasma charging damage, metal-gate processing, and emerging high-k dielectric, toward sub-100 nm technology nodes have been discussed.
URI:	http://hdl.handle.net/11536/18811
ISBN:	0-7803-7235-2
ISSN:	2159-1660
Journal:	2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS
Begin Page:	133
End Page:	140
Appears in Collections:	Conferences Paper