| Title: | NITRIDATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOS |
| Authors: | LIN, YH LAI, SC LEE, CL LEI, TF CHAO, TS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 1-Jun-1995 |
| Abstract: | Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF (+)(2)-implantation is proposed and demonstrated, The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics. |
| URI: | http://dx.doi.org/10.1109/55.790724 http://hdl.handle.net/11536/1904 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/55.790724 |
| Journal: | IEEE ELECTRON DEVICE LETTERS |
| Volume: | 16 |
| Issue: | 6 |
| Begin Page: | 248 |
| End Page: | 249 |
| Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.
- A COMPREHENSIVE STUDY OF SUPPRESSION OF BORON PENETRATION BY AMORPHOUS-SI GATE IN P+-GATE PMOS DEVICES / LIN, CY;JUAN, KC;CHANG, CY;PAN, FM;CHOU, PF
- Nitridization of the stacked poly-Si gate to suppress the boron penetration in pMOS / Lin, YH;Lai, CS;Lee, CL;Lei, TF;Chao, TS
- Suppression of boron penetration for p(+) stacked poly-Si gates by using inductively coupled N-2 plasma treatment / Cheng, HC;Lai, WK;Hwang, CC;Juang, MH;Chu, SC
- Suppression of boron penetration in BF2+-implanted poly-Si gate / Chao, TS;Chu, CH;Wang, CF;Ho, KJ;Lei, TF
- THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS / LIN, YH;LEE, CL;LEI, TF;CHAO, TS
Loading...