Title: A computational efficient method for HBT intermodulation distortions and two-tone characteristics simulation
Authors: Huang, KY
Li, YM
Lee, CP
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 2001
Abstract: In this paper, a new simulation method for two-tone characteristics calculations and the third-order intercept point (OIP3) of heterojunction bipolar transistor (HBT) in large-scale time domain is proposed. Base on waveform relaxation (WR) and monotone iterative (MI) methods, we solve a set of nonlinear ordinary differential equation (ODE) of equivalent circuit. With this approach, the two-tone characteristics in frequency domain for HBTs were directly computed from time domain result with fast Fourier transform (FFT). Simulation results on a realistic HBT are presented to show the accuracy and efficiency of the method.
URI: http://hdl.handle.net/11536/19123
ISBN: 3-211-83708-6
Journal: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001
Begin Page: 226
End Page: 229
Appears in Collections:Conferences Paper