| Title: | Multi-energy arsenic-ion-implanted GaAs photoconductors for ultrafast switching and THz Generation |
| Authors: | Pan, CL Liu, TA Lin, GR Tani, M 光電工程學系 Department of Photonics |
| Issue Date: | 2000 |
| URI: | http://hdl.handle.net/11536/19199 |
| ISBN: | 0-7803-5947-X |
| ISSN: | 1092-8081 |
| Journal: | LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2 |
| Begin Page: | 179 |
| End Page: | 180 |
| Appears in Collections: | Conferences Paper |
- 砷離子佈植砷化鎵光導天線產生次毫米波的綜合研究 / 蔡仁傑;Jen-Chieh Tsai;潘犀靈;Ci-Ling Pan
- Ultrafast response of multi-energy proton-bombarded GaAs photoconductors / Lin, GR;Pan, CL
- Multi-energy arsenic-ion-implanted GaAs photoconductive switches for ultrafast and millimeter wave applications / Pan, CL
- THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs / Liu, TA;Tani, M;Lin, GR;Pan, CL
- Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAs / Liu, TA;Lin, GR;Lee, YC;Wang, SC;Tani, M
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