Rf loss and cross talk on extremely high resistivity (10K-1M Omega-cm) Si fabricated by ion implantation

Title:	Rf loss and cross talk on extremely high resistivity (10K-1M Omega-cm) Si fabricated by ion implantation
Authors:	Wu, YH Chin, A Shih, KH Wu, CC Liao, CP Pai, SC Chi, CC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	2000
Abstract:	We have achieved 1.6M Omega -cm resistivity using ion implantation that has little negative effect on MOS devices. Extremely low loss and cross coupling of 6.3 and -79 dB/cm (10 mum gap) at 20GHz are measured with 1 mum Al, respectively, which is due to implant induced trap with similar to 1ps carrier lifetime and stable to 400 degreesC.
URI:	http://hdl.handle.net/11536/19265
ISBN:	0-7803-5687-X
ISSN:	0149-645X
Journal:	2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3
Begin Page:	221
End Page:	224
Appears in Collections:	Conferences Paper