Title: | Normal incident quantum well infrared photodetectors |
Authors: | Lee, CP Wang, SY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Issue Date: | 1998 |
Abstract: | By using highly doped InGaAs quantum wells, grating-free two color quantum well infrared photodetectors with large normal incidence responses have been demonstrated. These devices have comparable performance as conventional QWIPs with surface gratings but without the complexity of gratings. The TE absorption was found to be enhanced by the use of the highly strained: InGaAs quantum wells and the high doping concentration in the wells. Two-color QWIPs Rave also demonstrated with excellent performance. |
URI: | http://hdl.handle.net/11536/19578 |
ISBN: | 0-7803-4306-9 |
Journal: | 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS |
Begin Page: | 637 |
End Page: | 640 |
Appears in Collections: | Conferences Paper |