AlGaN/GaN Multiple Quantum Wells Grown By Atomic Layer Deposition

Title:	AlGaN/GaN Multiple Quantum Wells Grown By Atomic Layer Deposition
Authors:	Lo, M. H. Chen, S. W. Li, Z. Y. Lu, T. C. Kuo, H. C. Wang, S. C. 光電工程學系 Department of Photonics
Issue Date:	2008
Abstract:	Three-pair AlGaN/GaN multiple quantum well structure with superlattice was grown using metal-organic chemical vapor deposition system. The AlGaN barrier and GaN well of the MQW were grown by atmoic layer deposition and conventional growth, respectively. (C) 2008 Optical Society of America
URI:	http://hdl.handle.net/11536/1974
ISBN:	978-1-55752-859-9
Journal:	2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9
Begin Page:	1059
End Page:	1060
Appears in Collections:	Conferences Paper