| Title: | Passivation effects of ion plating capping oxide on poly-Si TFTs |
| Authors: | Yeh, CF Chen, TJ Kao, JS 交大名義發表 電子工程學系及電子研究所 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 1997 |
| URI: | http://hdl.handle.net/11536/19771 |
| ISBN: | 0-7803-3911-8 |
| Journal: | 55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997 |
| Begin Page: | 56 |
| End Page: | 57 |
| Appears in Collections: | Conferences Paper |
- In-situ O-2-plasma passivation effect on poly-Si TFTs during ion plating capping oxide / Yeh, CF;Chen, TJ;Lin, MT;Kao, JS
- O-2-plasma passivation effects on polysilicon thin film transistors using ion plating method / Yeh, CF;Chen, TJ;Lin, MT;Kao, JS
- 複晶矽薄膜電晶體關鍵製程技術之研究 / 陳泰如;Chen, Tai-Ju;葉清發;Yeh Ching-Fa
- Passivation-Induced Subthreshold Kink Effect of Ultrathin-Oxide Low-Temperature Polycrystalline Silicon Thin Film Transistors / Tsai, Mon-Chin;Liao, Ta-Chuan;Lee, I-Che;Cheng, Huang-Chung
- Improved Performance of MIC Poly-Si TFTs Using Driven-in Nickel Induced Crystallization (DIC) with Cap SiO2 by F implantation / Lai, Ming-Hui;Wu, YewChung Sermon;Tung, Teng-Fu;Wu, Hung-Yu
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