Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's

Title:	Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's
Authors:	Wang, TH Chang, TE Chiang, LP Huang, CM Guo, JC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	1996
URI:	http://hdl.handle.net/11536/19878
ISBN:	0-7803-3343-8
Journal:	1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS
Begin Page:	232
End Page:	233
Appears in Collections:	Conferences Paper