| Title: | MICROCRYSTALLINE beta-SIC GROWTH ON SI BY ECR-CVD AT 500 degrees C |
| Authors: | CHENG, KL LIU, CC CHENG, HC LEE, CY YEW, TR 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 1995 |
| URI: | http://hdl.handle.net/11536/19967 |
| ISBN: | 1-55899-259-6 |
| ISSN: | 0272-9172 |
| Journal: | MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS |
| Volume: | 358 |
| Begin Page: | 799 |
| End Page: | 803 |
| Appears in Collections: | Conferences Paper |
- Polycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees C / Cheng, KL;Liu, CC;Fu, CM;Cheng, HC;Lee, C
- Effects of CH4/SiH4 flow ratio and microwave power on the growth of beta-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 degrees C / Lee, WH;Lin, JC;Lee, C;Cheng, HC;Yew, TR
- Growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition using SiH4/CH4/H-2 / Liu, CC;Lee, CP;Cheng, KL;Cheng, HC;Yew, TR
- X光光罩之鼓膜與吸收層之研究 / 徐志學;Zhi-Xue Hsu;黃遠東;許鉦宗;Yang-Tung Huang
- EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C / LIU, CC;LEE, CY;CHENG, KL;CHENG, HC;YEW, TR
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