| Title: | Accurate MOS device hot carrier models for VLSI reliability simulation |
| Authors: | CHUNG, SS YANG, JJ SU, JS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 1995 |
| URI: | http://hdl.handle.net/11536/20003 http://dx.doi.org/10.1109/CICC.1995.518175 |
| ISBN: | 0-7803-2585-0 |
| DOI: | 10.1109/CICC.1995.518175 |
| Journal: | PROCEEDINGS OF THE IEEE 1995 CUSTOM INTEGRATED CIRCUITS CONFERENCE |
| Begin Page: | 233 |
| End Page: | 236 |
| Appears in Collections: | Conferences Paper |
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- Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices / Wang, HCH;Wang, CC;Diaz, CH;Liew, BK;Sun, JYC
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