Performance of MOCVD tantalum nitride diffusion barrier for copper metallization

Title:	Performance of MOCVD tantalum nitride diffusion barrier for copper metallization
Authors:	Sun, SC Tsai, MH Tsai, CE Chiu, HT 奈米中心 Nano Facility Center
Issue Date:	1995
URI:	http://hdl.handle.net/11536/20046 http://dx.doi.org/10.1109/VLSIT.1995.520844
ISBN:	0-7803-2602-4
DOI:	10.1109/VLSIT.1995.520844
Journal:	1995 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS
Begin Page:	29
End Page:	30
Appears in Collections:	Conferences Paper

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