CHARACTERIZATION OF A HIGH-QUALITY AND UV-TRANSPARENT PECVD SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATIONS

Title:	CHARACTERIZATION OF A HIGH-QUALITY AND UV-TRANSPARENT PECVD SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATIONS
Authors:	WANG, CK YING, TL WEI, CS LIU, LM CHENG, HC LIN, MS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	PE-SIN;UV-TRANSMITTANCE;EPROM
Issue Date:	1994
URI:	http://hdl.handle.net/11536/20116 http://dx.doi.org/10.1117/12.186067
ISBN:	0-8194-1668-1
DOI:	10.1117/12.186067
Journal:	MICROELECTRONICS TECHNOLOGY AND PROCESS INTEGRATION
Volume:	2335
Begin Page:	282
End Page:	290
Appears in Collections:	Conferences Paper

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APA	WANG, C., YING, T., WEI, C., LIU, L., CHENG, H., & LIN, M. (1994). CHARACTERIZATION OF A HIGH-QUALITY AND UV-TRANSPARENT PECVD SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATIONS. WOS:A1994BB55A00030.
Bibtex	@article{WANG1994CHARACTERIZATION, title={CHARACTERIZATION OF A HIGH-QUALITY AND UV-TRANSPARENT PECVD SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATIONS}, author={WANG, CK and YING, TL and WEI, CS and LIU, LM and CHENG, HC and LIN, MS}, journal={WOS:A1994BB55A00030}, year={1994}, url={https://ir.lib.nycu.edu.tw/handle/11536/20116}, }