CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O

Title:	CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O
Authors:	CHAO, TS LEI, TF 電控工程研究所 Institute of Electrical and Control Engineering
Issue Date:	1-Mar-1995
Abstract:	Growth mechanisms of three different orientations Si wafer oxidized in N2O have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 Angstrom. From our results, this phenomenon is closely related with the initial native oxide before oxidation.
URI:	http://dx.doi.org/10.1149/1.2048576 http://hdl.handle.net/11536/2027
ISSN:	0013-4651
DOI:	10.1149/1.2048576
Journal:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume:	142
Issue:	3
Begin Page:	L34
End Page:	L35
Appears in Collections:	Articles

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