Title: | High-power diode-pumped actively Q-switched Nd : YVO4 self-Raman laser: influence of dopant concentration |
Authors: | Chen, YF 電子物理學系 Department of Electrophysics |
Issue Date: | 15-Aug-2004 |
Abstract: | Efficient self-Raman frequency conversion from a diode-pumped actively Q-switched Nd:YVO4 laser at 1064 nm to Stokes emission. at 1176 nm is achieved for the first time to the author's knowledge. With a 0.2-at. % Nd:YVO4 crystal, greater than 1.5 W of power at a wavelength of 1176 nm at a repetition rate of 20 kHz was generated with a diode pump power of 10.8 W, corresponding to 4 conversion of 13.9%. Pulse width and peak power were 18 ns and 4.2 kW, respectively. (C) 2004 Optical Society of America. |
URI: | http://dx.doi.org/10.1364/OL.29.001915 http://hdl.handle.net/11536/26473 |
ISSN: | 0146-9592 |
DOI: | 10.1364/OL.29.001915 |
Journal: | OPTICS LETTERS |
Volume: | 29 |
Issue: | 16 |
Begin Page: | 1915 |
End Page: | 1917 |
Appears in Collections: | Articles |