VISIBLE INGAP/LNGAAIP QUANTUM-WELL TOP SURFACE-EMITTING LASER-DIODES

doi:10.1063/1.110343

Title:	VISIBLE INGAP/LNGAAIP QUANTUM-WELL TOP SURFACE-EMITTING LASER-DIODES
Authors:	TAI, KC HUANG, KF WU, CC WYNN, JD 電子物理學系光電工程學系 Department of Electrophysics Department of Photonics
Issue Date:	15-Nov-1993
Abstract:	Vertical cavity top surface emitting lasers emitting near 0.67 mu m visible spectral region were fabricated by one-step low pressure metalorganic vapor phase deposition technique. The lasers used four 80-Angstrom-thick InGaP/InGaAlP quantum wells active region, sandwiched between two Al0.5Ga0.5As/AlAs distributed Bragg reflectors. Room temperature pulsed threshold current was 10 mA for 15 mu m diam devices.
URI:	http://dx.doi.org/10.1063/1.110343 http://hdl.handle.net/11536/2787
ISSN:	0003-6951
DOI:	10.1063/1.110343
Journal:	APPLIED PHYSICS LETTERS
Volume:	63
Issue:	20
Begin Page:	2732
End Page:	2734
Appears in Collections:	Articles