Investigation of Cu/TaN metal gate for metal-oxide-silicon devices (vol 150, pg G22, 2003)

Title:	Investigation of Cu/TaN metal gate for metal-oxide-silicon devices (vol 150, pg G22, 2003)
Authors:	Tsui, BY Huang, CF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	1-May-2003
URI:	http://dx.doi.org/10.1149/1.1566966 http://hdl.handle.net/11536/27945
ISSN:	0013-4651
DOI:	10.1149/1.1566966
Journal:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume:	150
Issue:	5
Begin Page:	L10
End Page:	L10
Appears in Collections:	Articles

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APA	Tsui, B., & Huang, C. (2003). Investigation of Cu/TaN metal gate for metal-oxide-silicon devices (vol 150, pg G22, 2003). WOS:000182184200072.
Bibtex	@article{Tsui2003Investigation, title={Investigation of Cu/TaN metal gate for metal-oxide-silicon devices (vol 150, pg G22, 2003)}, author={Tsui, BY and Huang, CF}, journal={WOS:000182184200072}, year={2003}, url={https://ir.lib.nycu.edu.tw/handle/11536/27945}, }