| Title: | THz radiation emission properties of multienergy arsenic-ion-implanted GaAs and semi-insulating GaAs based photoconductive antennas |
| Authors: | Liu, TA Tani, M Pan, CL 光電工程學系 Department of Photonics |
| Issue Date: | 1-Mar-2003 |
| Abstract: | We compare the performance of THz photoconductive (PC) emitter antennas fabricated on multienergy arsenic ion implanted GaAs (multi-GaAs:As+) and semi-insulating GaAs. High damage threshold biasing (>60 kV/cm) and large saturation optical-pumping power (similar to20 mW) for multi-GaAs:As+ based PC antennas are reported. Carrier mobility in the As ion implanted layer of GaAs:As+ was estimated to be about 150 cm(2)/V/s, which was comparable to that of. low,temperature GaAs. (C) 2003 American Institute of Physics. |
| URI: | http://dx.doi.org/10.1063/1.1541105 http://hdl.handle.net/11536/28037 |
| ISSN: | 0021-8979 |
| DOI: | 10.1063/1.1541105 |
| Journal: | JOURNAL OF APPLIED PHYSICS |
| Volume: | 93 |
| Issue: | 5 |
| Begin Page: | 2996 |
| End Page: | 3001 |
| Appears in Collections: | Articles |
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- Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs / Liu, TA;Tani, M;Nakajima, M;Hangyo, M;Pan, CL
- Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAs / Liu, TA;Lin, GR;Lee, YC;Wang, SC;Tani, M
- Dependence of terahertz radiation on gap sizes of biased multi-energy arsenic-ion-implanted and semi-insulating GaAs antennas / Liu, T. -A.;Chou, R. -H.;Pan, C. -L.
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