Title: DEVICE AND CIRCUIT SIMULATION OF ANOMALOUS DX TRAP EFFECTS IN DCFL AND SCFL HEMT INVERTERS
Authors: WANG, TH
WU, SJ
HUANG, CM
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Nov-1993
Abstract: An integrated device and circuit analysis has been developed to evaluate the DX trap induced anomalous transient phenomena in DCFL and SCFL AlGaAs/GaAs HEMT inverters. The slow transient effect and the hysteretic characteristics of the input-output voltage transfer function in the inverters are simulated. The result shows that in comparison with the DCFL inverter, the DX trap effects are much improved in the SCFL inverter due to its particular operational principle.
URI: http://dx.doi.org/10.1109/43.248087
http://hdl.handle.net/11536/2809
ISSN: 0278-0070
DOI: 10.1109/43.248087
Journal: IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
Volume: 12
Issue: 11
Begin Page: 1758
End Page: 1761
Appears in Collections:Articles


Files in This Item:

  1. A1993ML08900015.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.