Title: Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba0.7Sr0.3TiO3 thin films
Authors: Kuo, SY
Chen, CS
Tseng, TY
Chang, SC
Hsieh, WF
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Issue Date: 15-Aug-2002
Abstract: We found the dependence of luminescence efficiency on Er3+ concentration and sintering temperature in the Er-doped Ba0.7Sr0.3TiO3 (BST) thin films is governed by crystallinity and ion-ion interaction. X-ray diffraction and Raman studies of the sol-gel prepared samples show that the BST polycrystalline phase occurred when the sintering temperature reaches 700 degreesC, whereas, it becomes worse for temperature above 700 degreesC resulting from phase separation and the Er3+ concentration exceeding 3 mol % due to charge compensation mechanism. The observed green emission reaches maximum at sintering temperature 700 degreesC and 3 mol % Er3+ ions concentration. We also showed the Er dopant does not affect the dielectric property of BST thin films in C-V measurement and the Ba0.7Sr0.3TiO3 films doped with Er3+ ions may have potential use for electroluminescence devices. (C) 2002 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1492870
http://hdl.handle.net/11536/28578
ISSN: 0021-8979
DOI: 10.1063/1.1492870
Journal: JOURNAL OF APPLIED PHYSICS
Volume: 92
Issue: 4
Begin Page: 1868
End Page: 1872
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