A NEW DRAIN ENGINEERING STRUCTURE-SCD-LDD (SURFACE COUNTER DOPED LDD) FOR IMPROVED HOT-CARRIER RELIABILITY

Title:	A NEW DRAIN ENGINEERING STRUCTURE-SCD-LDD (SURFACE COUNTER DOPED LDD) FOR IMPROVED HOT-CARRIER RELIABILITY
Authors:	CHOU, JW CHANG, CY HO, LT KO, J HSUE, P 電控工程研究所 Institute of Electrical and Control Engineering
Keywords:	DRAIN ENGINEERING;LIGHTLY DOPED DRAIN (LDD);OBLIQUE IMPLANTATION;SURFACE COUNTER DOPED LDD (SCD-LDD);HOT CARRIER RELIABILITY
Issue Date:	1-Sep-1993
Abstract:	A new SCD-LDD (Surface Counter Doped LDD) structure is proposed. This structure introduces an additional oblique BF2 implant after nLDD implant, which counter-dopes the nLDD surface concentration near the gate edge. As a result, the lateral electric fields beneath the gate were reduced and the saturation drain current was conducted downward away from the maximum electric fields, resulting in a substantial enhancement of hot carrier reliability due to suppression of hot carrier generation and injection with this structure.
URI:	http://hdl.handle.net/11536/2891
ISSN:	0021-4922
Journal:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume:	32
Issue:	9A
Begin Page:	L1203
End Page:	L1205
Appears in Collections:	Articles