Deep hole traps created by gamma-ray irradiation of GaInP

Title:	Deep hole traps created by gamma-ray irradiation of GaInP
Authors:	Sung, WJ Liu, TY Yang, SL Huang, KF Tseng, TY Chou, FI Wei, YY 電子物理學系 Department of Electrophysics
Keywords:	GaInP;gamma-ray;irradiation;defect;trap;deep level;DLTS
Issue Date:	1-Dec-2001
Abstract:	Deep hole traps, created by gamma-ray irradiation of Al/GaInP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Two distinct deep hole traps, A and B, were observed in the irradiated GaInP samples, According to the analysis of trap concentration in various samples, the trap A is verified as a bulk defect located at 0.29 eV above the valance band. Meanwhile, the trap B is an interface state originated from the junctions of Al/Mg-doped GaInP contacts.
URI:	http://hdl.handle.net/11536/29232
ISSN:	0021-4922
Journal:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume:	40
Issue:	12
Begin Page:	6807
End Page:	6808
Appears in Collections:	Articles

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