| Title: | THICKNESS DETERMINATION OF POLY-SI/POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETER |
| Authors: | CHAO, TS LEE, CL LEI, TF 電控工程研究所 Institute of Electrical and Control Engineering |
| Keywords: | MEASUREMENT;THIN FILMS;ELLIPSOMETRY |
| Issue Date: | 24-Jun-1993 |
| Abstract: | An ellipsometry measurement method is proposed to measure the poly-Si/poly-oxide/poly-Si/SiO2/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM. |
| URI: | http://hdl.handle.net/11536/2977 |
| ISSN: | 0013-5194 |
| Journal: | ELECTRONICS LETTERS |
| Volume: | 29 |
| Issue: | 13 |
| Begin Page: | 1157 |
| End Page: | 1159 |
| Appears in Collections: | Articles |
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- POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE FOR ELLIPSOMETRY MEASUREMENT / CHAO, TS;LEE, CL;LEI, TF;YEN, YT
- MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY MEASUREMENT ON LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON AND POLYSILICON / CHAO, TS;LEE, CL;LEI, TF
- High-performance solid-phase crystallized polycrystalline silicon thin-film transistors with floating-channel structure / Chang, Chia-Wen;Deng, Chih-Kang;Chang, Che-Lun;Liao, Ta-Chuan;Lei, Tan-Fu
- A novel process-compatible fluorination technique with electrical characteristic improvements of poly-Si TFTs / Wang, SD;Lo, WH;Chang, TY;Lei, TF
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