Ion beam studies of InAs/GaAs quantum dots after annealing

Title:	Ion beam studies of InAs/GaAs quantum dots after annealing
Authors:	Niu, H. Chen, C. H. Wang, H. Y. Wu, S. C. Lee, C. P. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	quantum dots;GaAs;InAs;ion-channeling
Issue Date:	1-Apr-2008
Abstract:	The microstructure changes of self-assembled InAs/GaAs quantum dots during RTA treatment was investigated using ion channeling and photoluminescence (PL). A small blueshift of the PL emission is observed for annealing temperatures of 650-800 degrees C and an obvious blueshift at 850 degrees C. The yield of channeled spectra decreased as annealing temperature was increased, but the yield increased while temperature above 800 degrees C in RTA. These results imply the strain of QD varied during RTA treatments. In addition, the As/Ga atomic ratio near the surface was determined from the surface peaks of the channeled spectrum. (c) 2008 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.nimb.2008.02.040 http://hdl.handle.net/11536/29798
ISSN:	0168-583X
DOI:	10.1016/j.nimb.2008.02.040
Journal:	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume:	266
Issue:	8
Begin Page:	1235
End Page:	1237
Appears in Collections:	Conferences Paper

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