OBSERVATION OF QUANTUM CONFINEMENT EFFECTS IN STRAINED SI0.84GE0.16/SI QUANTUM-WELLS AT ROOM-TEMPERATURE

doi:10.1063/1.109241

Title:	OBSERVATION OF QUANTUM CONFINEMENT EFFECTS IN STRAINED SI0.84GE0.16/SI QUANTUM-WELLS AT ROOM-TEMPERATURE
Authors:	CHEN, YF DAI, YT CHOU, HP CHANG, DC CHANG, CY WANG, PJ 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	24-May-1993
Abstract:	We report the first study of quantum confinement shifts of energy gap in strained Si0.84Ge0.16/Si quantum wells at room temperature by photothermal deflection spectroscopy (PDS) technique. The experimental results obtained from the amplitude and phase of the PDS signal are in good agreement with quantum well subband calculation.
URI:	http://dx.doi.org/10.1063/1.109241 http://hdl.handle.net/11536/3012
ISSN:	0003-6951
DOI:	10.1063/1.109241
Journal:	APPLIED PHYSICS LETTERS
Volume:	62
Issue:	21
Begin Page:	2713
End Page:	2715
Appears in Collections:	Articles