Novel cleaning solutions for polysilicon film post chemical mechanical polishing

Title:	Novel cleaning solutions for polysilicon film post chemical mechanical polishing
Authors:	Pan, TM Lei, TF Chen, CC Chao, TS Liaw, MC Yang, WL Tsai, MS Lu, CP Chang, WH 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	cleaning;CMP;EDTA;polysilicon;TMAH
Issue Date:	1-Jul-2000
Abstract:	Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH4OH+H2O) alkaline aqueous solution to enhance removal of metallic and organic contamination, From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning.
URI:	http://dx.doi.org/10.1109/55.847373 http://hdl.handle.net/11536/30422
ISSN:	0741-3106
DOI:	10.1109/55.847373
Journal:	IEEE ELECTRON DEVICE LETTERS
Volume:	21
Issue:	7
Begin Page:	338
End Page:	340
Appears in Collections:	Articles

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