ELECTRICAL BEHAVIOR OF THE MNO2-DOPED ZNO-BI2O3 SYSTEM

Abstract

The electrical behaviour of xwt% MnO2-(100-x)(95 wt% ZnO-5 wt% Bi2O3) is investigated. Addition of MnO2 retards grain growth in the ZnO-Bi2O3 system. It is observed that the MnO2 dopant decreases the leakage current, while it increases the non-linearity coefficient and the grain boundary resistance of ZnO-Bi2O3 ceramics. In addition, the noise spectrum of MnO2-doped ZnO-Bi2O3 deviates from 1/f behaviour. The deviation is, however, less enhanced for samples with more MnO2 dopant.