| Title: | POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE FOR ELLIPSOMETRY MEASUREMENT |
| Authors: | CHAO, TS LEE, CL LEI, TF YEN, YT 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Keywords: | MEASUREMENT;THIN FILMS;ELLIPOSOMETRY |
| Issue Date: | 4-Jun-1992 |
| Abstract: | A multiple poly-oxide/poly-Si/SiO2/Si sandwiched structure is proposed for the conventional single incident angle and single wavelength ellipsometry measurement of the thicknesses and refractive indices of the poly-oxide and the poly-Si at the same time. The structure is simple and gives accurate results. |
| URI: | http://hdl.handle.net/11536/3385 |
| ISSN: | 0013-5194 |
| Journal: | ELECTRONICS LETTERS |
| Volume: | 28 |
| Issue: | 12 |
| Begin Page: | 1144 |
| End Page: | 1145 |
| Appears in Collections: | Articles |
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- THICKNESS DETERMINATION OF POLY-SI/POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETER / CHAO, TS;LEE, CL;LEI, TF
- MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY MEASUREMENT ON LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON AND POLYSILICON / CHAO, TS;LEE, CL;LEI, TF
- High-performance solid-phase crystallized polycrystalline silicon thin-film transistors with floating-channel structure / Chang, Chia-Wen;Deng, Chih-Kang;Chang, Che-Lun;Liao, Ta-Chuan;Lei, Tan-Fu
- Characterizing fluorine-ion implant effects on poly-Si thin-film transistors with Pr2O3 gate dielectric / Chang, Chia-Wen;Deng, Chih-Kang;Wu, Shih-Chieh;Huang, Jiun-Jia;Chang, Hong-Ren
- ELLIPSOMETRY STUDY ON REFRACTIVE-INDEX PROFILES OF THE SIO2/SI3N4/SIO2/SI STRUCTURE / TIEN, SC;CHUNG, LL;TAN, FL
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