| Title: | Characteristics of poly-Si nanowire transistors with multiple-gate configurations |
| Authors: | Hsu, Hsing-Hui Lin, Homg-Chih Lee, Ko-Hui Huang, Jian-Fu Huang, Tiao-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 2008 |
| URI: | http://hdl.handle.net/11536/3408 http://dx.doi.org/10.1109/VTSA.2008.4530818 |
| ISBN: | 978-1-4244-1614-1 |
| DOI: | 10.1109/VTSA.2008.4530818 |
| Journal: | 2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM |
| Begin Page: | 101 |
| End Page: | 102 |
| Appears in Collections: | Conferences Paper |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.
- A novel multiple-gate polycrystalline silicon nanowire transistor featuring an inverse-T gate / Lin, Horng-Chih;Hsu, Hsing-Hui;Su, Chun-Jung;Huang, Tiao-Yuan
- Fabrication and Characterization of Multiple-Gated Poly-Si Nanowire Thin-Film Transistors and Impacts of Multiple-Gate Structures on Device Fluctuations / Hsu, Hsing-Hui;Liu, Ta-Wei;Chan, Leng;Lin, Chuan-Ding;Huang, Tiao-Yuan
- Junctionless Poly-Si Nanowire Transistors With Low-Temperature Trimming Process for Monolithic 3-D IC Application / Lin, Jer-Yi;Kuo, Po-Yi;Lin, Ko-Li;Chin, Chun-Chieh;Chao, Tien-Sheng
- 應用於三維邏輯電路與非揮發性記憶體之先進奈米線技術 / 林鴻志;LIN HORNG-CHIH
- Threshold-Voltage Fluctuation of Double-Gated Poly-Si Nanowire Field-Effect Transistor / Hsu, Hsing-Hui;Lin, Horng-Chih;Chan, Leng;Huang, Tiao-Yuan
Loading...