Title: | INFLUENCE OF NONPARABOLICITY ON HOT-ELECTRONS IN N-TYPE GALLIUM-ARSENIDE |
Authors: | WU, CC LIN, CJ 電控工程研究所 Institute of Electrical and Control Engineering |
Issue Date: | 1-Mar-1992 |
Abstract: | Hot-electron transport in n-type GaAs has been investigated in the crossed applied DC electric field and DC magnetic field. The energy band structure of conduction electrons is taken to be a non-parabolic band and the dominant interaction between hot electrons and lattices is assumed to be the deformation-potential coupling. Results show that the dissipative current density increases nonlinearly with the applied electric field owing to the non-parabolic band structure of electrons in semiconductors. In the lower electric field region, the dependence of the current density on temperature does not appear to follow a regular trend. It is also shown that the current density depends strongly on the magnetic field. |
URI: | http://dx.doi.org/10.1088/0268-1242/7/3B/095 http://hdl.handle.net/11536/3512 |
ISSN: | 0268-1242 |
DOI: | 10.1088/0268-1242/7/3B/095 |
Journal: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
Volume: | 7 |
Issue: | 3B |
Begin Page: | B367 |
End Page: | B368 |
Appears in Collections: | Conferences Paper |
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