MOLYBDENUM SILICIDE SCHOTTKY CONTACTS TO GAAS

doi:10.1007/BF00695001

Title:	MOLYBDENUM SILICIDE SCHOTTKY CONTACTS TO GAAS
Authors:	CHUANG, HF LEE, CP WU, SC 電控工程研究所 Institute of Electrical and Control Engineering
Issue Date:	1-Mar-1991
Abstract:	The thermal stability of MoSi(x) Schottky contacts to GaAs has been studied. The contacts were analysed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), sheet resistance, and current-voltage measurements. We have studied MoSi(x) with the compositions x = 0, 0.3, 0.6, 1, and 2. The films were annealed at various temperatures up to 850-degrees-C. The thermal stability of the films is found to be x-dependent. The best composition for thermally stable Schottky contacts is Mo5Si3. Good Schottky characteristics were retained with annealing temperatures up to 850-degrees-C for 30 min.
URI:	http://dx.doi.org/10.1007/BF00695001 http://hdl.handle.net/11536/3848
ISSN:	0957-4522
DOI:	10.1007/BF00695001
Journal:	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume:	2
Issue:	1
Begin Page:	28
End Page:	33
Appears in Collections:	Articles