Title: AN SCR WITH SIMPLE MIS STRUCTURE
Authors: CHANG, DCY
LEE, CL
LEI, TF
電控工程研究所
Institute of Electrical and Control Engineering
Keywords: MIS SWITCHING DEVICES;SEMICONDUCTOR
Issue Date: 1-Dec-1990
Abstract: A device to work as an SCR with a simple MIS p-n Structure is proposed and demonstrated. It employs two junction diodes, with a thin oxide layer grown prior to metallization. This device can act as a triac when a bi-directional ac voltage is applied, while acts as an SCR when a bias voltage is applied to the N-substrate.
URI: http://hdl.handle.net/11536/3956
ISSN: 0021-4922
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 29
Issue: 12
Begin Page: L2169
End Page: L2170
Appears in Collections:Articles