Title: | AN SCR WITH SIMPLE MIS STRUCTURE |
Authors: | CHANG, DCY LEE, CL LEI, TF 電控工程研究所 Institute of Electrical and Control Engineering |
Keywords: | MIS SWITCHING DEVICES;SEMICONDUCTOR |
Issue Date: | 1-Dec-1990 |
Abstract: | A device to work as an SCR with a simple MIS p-n Structure is proposed and demonstrated. It employs two junction diodes, with a thin oxide layer grown prior to metallization. This device can act as a triac when a bi-directional ac voltage is applied, while acts as an SCR when a bias voltage is applied to the N-substrate. |
URI: | http://hdl.handle.net/11536/3956 |
ISSN: | 0021-4922 |
Journal: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 29 |
Issue: | 12 |
Begin Page: | L2169 |
End Page: | L2170 |
Appears in Collections: | Articles |