| Title: | IMPROVEMENT OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-CONTACTED DIODES AFTER FORWARD BIAS STRESSING |
| Authors: | WU, SL LEE, CL LEI, TF 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
| Issue Date: | 29-Oct-1990 |
| URI: | http://dx.doi.org/10.1063/1.104007 http://hdl.handle.net/11536/3984 |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.104007 |
| Journal: | APPLIED PHYSICS LETTERS |
| Volume: | 57 |
| Issue: | 18 |
| Begin Page: | 1904 |
| End Page: | 1906 |
| Appears in Collections: | Articles |
- HIGH-PERFORMANCE POLYSILICON CONTACTED SHALLOW JUNCTIONS FORMED BY STACKED-AMORPHOUS-SILICON FILMS / WU, SL;LEE, CL;LEI, TF
- Characteristics of high breakdown voltage Schottky barrier diodes using p(+)-polycrystalline-silicon diffused-guard-ring / Liou, BW;Lee, CL
- ESD robustness of thin-film devices with different layout structures in LTPS technology / Deng, Chih-Kang;Ker, Ming-Dou
- CHARACTERISTICS OF POLYSILICON CONTACTED SHALLOW JUNCTION DIODE FORMED WITH A STACKED-AMORPHOUS-SILICON FILM / WU, SL;LEE, CL;LEI, TF;CHANG, HC
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