| Title: | CURRENT-INJECTION 3-TERMINAL GAAS REGENERATIVE SWITCHES |
| Authors: | WANG, YH YARN, KF CHANG, CY 電控工程研究所 Institute of Electrical and Control Engineering |
| Issue Date: | 1-May-1990 |
| URI: | http://hdl.handle.net/11536/4108 |
| ISSN: | 0020-7217 |
| Journal: | INTERNATIONAL JOURNAL OF ELECTRONICS |
| Volume: | 68 |
| Issue: | 5 |
| Begin Page: | 693 |
| End Page: | 704 |
| Appears in Collections: | Articles |
- Comparison of GaInP/GaAs HBT RFDs with resistive loads and shunt-shunt feedback active loads / Wei, Hung-Ju;Meng, Chinchun;Chang, Yuwen;Huang, Guo-Wei
- Wide-ratio broadband SiGe HBT regenerative frequency divider enhanced by differential TIA load / Wei, H.-J.;Meng, C.;Chang, Y.-W.
- Arsenic-implanted GaAs: An alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications / Pan, CL;Lin, GR
- SPDT GaAs switches with copper metallized interconnects / Wu, Y. C.;Chang, E. Y.;Lin, Y. C.;Hsu, H. T.;Chen, S. H.
- Frequency detuning properties of EDFL pulses generated by harmonic mode-locking and regenerative amplification: a comparison / Chang, YC;Lin, GR
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