| Title: | SWITCHING CHARACTERISTICS OF MINPN DEVICES |
| Authors: | CHANG, DCY LEE, CL LEI, TF 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
| Issue Date: | 1-Mar-1989 |
| URI: | http://hdl.handle.net/11536/4397 |
| ISSN: | 0038-1101 |
| Journal: | SOLID-STATE ELECTRONICS |
| Volume: | 32 |
| Issue: | 3 |
| Begin Page: | 179 |
| End Page: | 189 |
| Appears in Collections: | Articles |
- Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation / Tsai, Tsung-Ling;Lin, Yu-Hsuan;Tseng, Tseung-Yuen
- Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer / Chandrasekaran, Sridhar;Simanjuntak, Firman Mangasa;Tseng, Tseung-Yuen
- ZrN-Based Flexible Resistive Switching Memory / Kumar, Dayanand;Chand, Umesh;Siang, Lew Wen;Tseng, Tseung-Yuen
- Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell / Simanjuntak, Firman Mangasa;Singh, Pragya;Chandrasekaran, Sridhar;Lumbantoruan, Franky Juanda;Yang, Chih-Chieh
- Switching characteristics in TiO2/ZnO double layer resistive switching memory device / Jain, Praveen K.;Salim, Mohammad;Chand, Umesh;Periasamy, C.
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