| Title: | THE BREAKOVER CONDITION FOR THE PNPN STRUCTURE |
| Authors: | CHANG, DCY 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
| Issue Date: | 1-Feb-1989 |
| URI: | http://dx.doi.org/10.1143/JJAP.28.L169 http://hdl.handle.net/11536/4404 |
| ISSN: | |
| DOI: | 10.1143/JJAP.28.L169 |
| Journal: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
| Volume: | 28 |
| Issue: | 2 |
| Begin Page: | L169 |
| End Page: | L172 |
| Appears in Collections: | Articles |
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- MODELING THE POSITIVE-FEEDBACK REGENERATIVE PROCESS OF CMOS LATCHUP BY A POSITIVE TRANSIENT POLE METHOD .1. THEORETICAL DERIVATION / KER, MD;WU, CY
- Improved Electrical Characteristics and Reliability of Multi-Stacking PNPN Junctionless Transistors Using Channel Depletion Effect / Lin, Ming-Huei;Shih, Yi-Jia;Liu, Chien;Chiu, Yu-Chien;Fan, Chia-Chi
- MODELING THE POSITIVE-FEEDBACK REGENERATIVE PROCESS OF CMOS LATCHUP BY A POSITIVE TRANSIENT POLE METHOD .2. QUANTITATIVE-EVALUATION / KER, MD;WU, CY
- TRANSIENT ANALYSIS OF SUBMICRON CMOS LATCHUP WITH A PHYSICAL CRITERION / KER, MD;WU, CY
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