THE DOPED QUANTUM WELL GATE FET FABRICATED BY LOW-PRESSURE MOCVD

Title:	THE DOPED QUANTUM WELL GATE FET FABRICATED BY LOW-PRESSURE MOCVD
Authors:	LIN, W LEI, MD CHANG, CY HSU, WC DI, LB KAI, F 電控工程研究所 Institute of Electrical and Control Engineering
Issue Date:	1-Dec-1988
URI:	http://hdl.handle.net/11536/4467
ISSN:
Journal:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume:	27
Issue:	12
Begin Page:	L2431
End Page:	L2433
Appears in Collections:	Articles