TEMPERATURE-DEPENDENCE OF HYDROGEN IMPLANT ON PASSIVATION OF ARGON IMPLANT DAMAGE IN SILICON

Title:	TEMPERATURE-DEPENDENCE OF HYDROGEN IMPLANT ON PASSIVATION OF ARGON IMPLANT DAMAGE IN SILICON
Authors:	CHIEN, HC ASHOK, S CHEN, MC 電控工程研究所 Institute of Electrical and Control Engineering
Issue Date:	1-Jul-1988
URI:	http://hdl.handle.net/11536/4506
ISSN:
Journal:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume:	27
Issue:	7
Begin Page:	L1317
End Page:	L1319
Appears in Collections:	Articles